| 发明名称 |
Method and Structure to Improve Process Window for Lithography |
| 摘要 |
The present disclosure provides a method for forming resist patterns. The method includes providing a substrate; forming a material layer including a plurality of quenchers on the substrate; forming a resist layer on the material layer; exposing the resist layer; and developing the resist layer to form a structure featuring resist remaining layer on an upper surface of the material layer, and a plurality of resist features on the resist remaining layer to improve the yield of lithography process |
| 申请公布号 |
US2014256146(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313945523 |
申请日期 |
2013.07.18 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Chien Shang-Chieh;Chang Shu-Hao;Wu Jui-Ching;Chen Jeng-Horng;Yen Anthony |
| 分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming resist patterns comprising:
providing a substrate; forming a material layer on the substrate, the material layer including a plurality of quenchers; forming a resist layer on the material layer; exposing the resist layer; and developing the resist layer to form a resist remaining layer on an upper surface of the material layer, and a plurality of resist features on the resist remaining layer. |
| 地址 |
Hsin-Chu TW |
