发明名称 METHODS FOR FABRICATING INTEGRATED CIRCUITS UTILIZING SILICON NITRIDE LAYERS
摘要 A method of fabricating an integrated circuit includes the steps of providing a semiconductor substrate comprising a semiconductor device disposed thereon and depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process. The first deposition process is a plasma-enhanced chemical vapor deposition (PECVD) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval. The PECVD process includes the steps of generating a plasma with a power source during the first time interval, the plasma comprising reactive ionic and radical species of a silicon-providing gas and a nitrogen-providing gas, and discontinuing generating the plasma during the second time interval immediately subsequent to the first time interval. The method further includes depositing a second silicon nitride layer over the first silicon nitride layer after the plurality of cycles.
申请公布号 US2014256141(A1) 申请公布日期 2014.09.11
申请号 US201313787521 申请日期 2013.03.06
申请人 GLOBALFOUNDRIES, INC. 发明人 Cao Huy;Liu Huang;Wong Hoong Shing;Srivathanakul Songkram;Gaan Sandeep
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of fabricating an integrated circuit comprising the steps of: providing a semiconductor substrate comprising a semiconductor device disposed thereon; depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process, wherein the first deposition process is a plasma-enhance chemical vapor deposition (PECVD) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval, the PECVD process comprising the steps of: generating a plasma with a power source during the first time interval, the plasma comprising reactive ionic and radical species of a silicon-providing gas and a nitrogen-providing gas; anddiscontinuing generating the plasma during the second time interval immediately subsequent to the first time interval; and depositing a second silicon nitride layer over the first silicon nitride layer after the plurality of cycles.
地址 Grand Cayman KY