发明名称 |
METHODS FOR FABRICATING INTEGRATED CIRCUITS UTILIZING SILICON NITRIDE LAYERS |
摘要 |
A method of fabricating an integrated circuit includes the steps of providing a semiconductor substrate comprising a semiconductor device disposed thereon and depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process. The first deposition process is a plasma-enhanced chemical vapor deposition (PECVD) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval. The PECVD process includes the steps of generating a plasma with a power source during the first time interval, the plasma comprising reactive ionic and radical species of a silicon-providing gas and a nitrogen-providing gas, and discontinuing generating the plasma during the second time interval immediately subsequent to the first time interval. The method further includes depositing a second silicon nitride layer over the first silicon nitride layer after the plurality of cycles. |
申请公布号 |
US2014256141(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201313787521 |
申请日期 |
2013.03.06 |
申请人 |
GLOBALFOUNDRIES, INC. |
发明人 |
Cao Huy;Liu Huang;Wong Hoong Shing;Srivathanakul Songkram;Gaan Sandeep |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating an integrated circuit comprising the steps of:
providing a semiconductor substrate comprising a semiconductor device disposed thereon; depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process, wherein the first deposition process is a plasma-enhance chemical vapor deposition (PECVD) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval, the PECVD process comprising the steps of:
generating a plasma with a power source during the first time interval, the plasma comprising reactive ionic and radical species of a silicon-providing gas and a nitrogen-providing gas; anddiscontinuing generating the plasma during the second time interval immediately subsequent to the first time interval; and depositing a second silicon nitride layer over the first silicon nitride layer after the plurality of cycles. |
地址 |
Grand Cayman KY |