| 发明名称 |
Electrical Connectors and Methods for Forming the Same |
| 摘要 |
A method includes coating a photo resist over an Under-Bump Metallurgy (UBM) layer and exposing the photo resist. In the step of exposing, a light amount reaching a bottom of the photo resist is less than about 5 percent of a light amount reaching a top surface of the photo resist. The method further includes developing the photo resist to form an opening in the photo resist. A portion of the UBM layer is exposed through the opening. The opening has a bottom lateral dimension greater than a top lateral dimension. An electrical connector is formed in the opening, wherein the electrical connector is non-reflowable. |
| 申请公布号 |
US2014256126(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313789899 |
申请日期 |
2013.03.08 |
| 申请人 |
Company, Ltd. Taiwan Semiconductor Manufacturing |
发明人 |
Wang Chun-Chieh;Kuo Hung-Jui;Liu Chung-Shi |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
coating a photo resist over a Under-Bump Metallurgy (UBM) layer; exposing the photo resist, wherein in the step of exposing, a light amount reaching a bottom of the photo resist is less than about 5 percent of a light amount reaching a top surface of the photo resist; developing the photo resist to form an opening in the photo resist, wherein a portion of the UBM layer is exposed through the opening, and wherein the opening has a bottom lateral dimension greater than a top lateral dimension; and forming an electrical connector in the opening, wherein the electrical connector is non-reflowable. |
| 地址 |
US |
