SEMICONDUCTOR PROCESS

摘要

A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided.

主权项

1. A semiconductor process, comprising:
forming a recess in a substrate; forming a liner covering the surface of the recess; forming a silicon rich layer on the liner; filling a silicon nitride compound in the recess; performing a transforming process to transform the silicon nitride compound into a silicon oxide and at least oxidize part of the silicon rich layer.