| 发明名称 |
VERTICAL TYPE SEMICONDUCTOR DEVICE, FABRICATION METHOD THEREOF AND OPERATION METHOD THEREOF |
| 摘要 |
A vertical type semiconductor device and a fabrication method thereof are provided. The vertical type semiconductor device includes a pillar structure having a stacking structure of a conductive layer and a data storage material and formed on a common source region, and a gate electrode formed to surround the data storage material of the pillar structure. |
| 申请公布号 |
US2014254256(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313967827 |
申请日期 |
2013.08.15 |
| 申请人 |
SK hynix Inc. |
发明人 |
CHOI Kang Sik |
| 分类号 |
H01L27/24;G11C13/00;H01L29/66 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A vertical type semiconductor device, comprising:
a pillar structure having a stacking structure of a conductive layer and a data storage material and formed on a common source region; and a gate electrode formed to surround the data storage material of the pillar structure. |
| 地址 |
Gyeonggi-do KR |
