METHOD OF PROGRAMMING A NON-VOLATILE RESISTIVE MEMORY

摘要

A method for pre-programming a matrix of resistive non-volatile memory cells, the cells including a dielectric material between two conducting electrodes and being initially in an original resistive state, the dielectric material being electrically modified to bring a cell from the original state to another resistive state wherein the resistance of the cell is at least twice and preferably at least ten times lower than the resistance of the cell in the original state. The method includes, prior to mounting a component containing the matrix on a support, programming the matrix by electrically bringing cells from the original state to the other state, leaving the other cells in their original state, and after mounting the component, applying to all the cells an intermediate voltage, to keep in the original state the cells in this state and returning or keeping to/in another state the cells not in the original state.

主权项

1. A method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) corresponding to a first resistive state and the dielectric material being able to be so electrically modified as to bring the memory cell from the original resistive state (original HRS) to at least another resistive state (LRS, programmed HRS) wherein the resistance of the memory cell is at least twice lower than the resistance of the memory cell in the original resistive state (original HRS), characterized in that the method comprises the following steps:
prior to mounting a component containing said matrix on a support: programming the matrix by electrically bringing a plurality of cells from the original resistive state (original HRS) to said other resistive state (LRS, programmed HRS); leaving the other memory cells in their original resistive state (original HRS); and characterized in that the method comprises the following step, after mounting the component containing said matrix on the support: applying to all the cells in the matrix an intermediate voltage, with said intermediate voltage being:
lower than a first range of voltages having a value high enough to be able to bring a memory cell from the original resistive state (original HRS) to a second resistive state (LRS) wherein the resistance of the memory cell is at least twice lower than the resistance of the memory cell in the original resistive state (original HRS), with the intermediate voltage being sufficient to modify the resistive state of the cells which had been left in their original resistive state (original HRS) during the step of programming executed prior to mounting;higher than a second range of voltages having values lower than the first range but high enough to be able to bring a memory cell which is not in the original resistive state (original HRS) to said second resistive state (LRS),with the first and second ranges of voltage being separated.