SINGLE-MASK SPACER TECHNIQUE FOR SEMICONDUCTOR DEVICE FEATURES

摘要

A method for fabricating semiconductor features. The method includes forming a first layer over a substrate. Forming a plurality of first holes in the first layer. The first layer includes sidewalls separating at least a portion of each first hole. The first holes include overlapping holes that are not separated by the sidewalls. Forming a plurality of spacers on the substrate and first layer. The spacers include spacer sidewalls separating adjacent overlapping holes. Etching exposed portions of the substrate to form a plurality of second holes.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a first layer over a substrate; forming a plurality of rounded first holes in the first layer using a lithographic process such that the first layer includes first layer sidewalls separating at least a portion of each first hole, and wherein the first holes include pairs of only two overlapping holes, the overlapping holes including pointed portions not separated by the first layer sidewalls; forming a plurality of spacers on the substrate, such that the spacers include spacer sidewalls separating adjacent overlapping holes; and etching exposed portions of the substrate, forming a plurality of second holes, each of the second holes having a single opening and is not connected to any other of the second holes.