| 发明名称 |
Nanodot-Enhanced Hybrid Floating Gate for Non-Volatile Memory Devices |
| 摘要 |
A memory device and a method of making a memory device that includes a semiconductor channel, a tunnel dielectric layer located over the semiconductor channel, a floating gate located over the tunnel dielectric layer, the floating gate comprising a continuous layer of an electrically conductive material and at least one protrusion of an electrically conductive material facing the tunnel dielectric layer and electrically shorted to the continuous layer, a blocking dielectric region located over the floating gate, and a control gate located over the blocking dielectric layer. |
| 申请公布号 |
US2014252447(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313792662 |
申请日期 |
2013.03.11 |
| 申请人 |
SANDISK TECHNOLOGIES, INC. |
发明人 |
Lee Donovan;Kai James K.;Samachisa George;Chien Henry;Matamis George;Purayath Vinod R. |
| 分类号 |
H01L29/788;H01L29/66 |
主分类号 |
H01L29/788 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a semiconductor channel; a tunnel dielectric layer located over the semiconductor channel; a floating gate located over the tunnel dielectric layer, the floating gate comprising a continuos layer of an electrically conductive material and at least one protrusion of an electrically conductive material facing the tunnel dielectric layer and electrically shorted to the continuos layer; a blocking dielectric region located over the floating gate; and a control gate located over the blocking dielectric layer. |
| 地址 |
Plano TX US |
