| 发明名称 |
METHOD OF ETCHING METAL LAYER |
| 摘要 |
In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer. The object is exposed to hexafluoroacetylacetone after exposing the object to the oxygen plasma. |
| 申请公布号 |
US2014251945(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414196376 |
申请日期 |
2014.03.04 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NISHIMURA Eiichi;YAMASHITA Fumiko;SASA Koyumi |
| 分类号 |
C23F1/12 |
主分类号 |
C23F1/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of etching a metal layer, comprising:
etching a metal layer of an object to be processed by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object; exposing the object to an oxygen plasma after etching the metal layer; and exposing the object to hexafluoroacetylacetone after exposing the object to the oxygen plasma. |
| 地址 |
Tokyo JP |
