Semiconductor device

摘要

The semiconductor device includes: a semiconductor substrate (SUB); a pair of injection elements (DR); an active barrier structure (AB) ; and a p-type ground region (PGD). The semiconductor substrate has a main surface and a p-type (PSR) region formed therein. The active barrier structure (AB) is arranged in a region sandwiched between the pair of injection elements over the main surface. The p-type ground region (PGD) is a ground potential-applicable region which is formed closer to an end side of the main surface than the pair of injection elements (DR) and the active barrier structure (AB), bypassing a region sandwiched between the pair of injection elements (DR) over the main surface, and which is electrically coupled to the p-type region (PSR). The p-type ground region is divided by a region adjacent to the region sandwiched between the pair of injection elements.