| 摘要 |
A surface emitting laser according to the present invention includes a lower reflector (101), a first spacer layer (102), an active layer (103), a second spacer layer (104) composed of a semiconductor material, a gap section (110) formed of at least one of vacuum and gas, and an upper reflector (105) in the written order, and also includes a control mechanism that changes a distance (±) between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length n eff ×d extending from an interface (A) between the lower reflector and the first spacer layer to an interface (B) between the second spacer layer and the gap section satisfies a predetermined relationship. |
