CU-SI-CO-BASE COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR PRODUCING SAME

摘要

A Cu-Si-Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass% of Co, 0.1-0.7 mass% of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at 6 angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by 6 scanning at ±=35° is at least 2.5 times that of a standard copper powder.