发明名称 Capacitor and method of manufacturing the same
摘要 There is provided the capacitor which has a lower electrode (30) having a structure in which a first conductive layer (18, 20) containing a first metal, a second conductive layer (22) that is formed on the first conductive layer (18, 20) and made of a metal oxide of a second metal different from the first metal, and a third conductive layer (24) that is formed on the second conductive layer (22) and made of a third metal different from the first metal are formed sequentially; the dielectric layer (32) formed on the lower electrode (30); and the upper electrode (34) formed on the capacitor dielectric layer (32).
申请公布号 EP1852893(A3) 申请公布日期 2014.09.10
申请号 EP20070114564 申请日期 2002.04.09
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 WANG, WENSHENG;FUJIKI, MITSUSHI;NAKAMURA, KO
分类号 H01L21/02;H01L23/52;H01L21/3205;H01L21/8246;H01L27/105;H01L27/108 主分类号 H01L21/02
代理机构 代理人
主权项
地址