发明名称 |
Capacitor and method of manufacturing the same |
摘要 |
There is provided the capacitor which has a lower electrode (30) having a structure in which a first conductive layer (18, 20) containing a first metal, a second conductive layer (22) that is formed on the first conductive layer (18, 20) and made of a metal oxide of a second metal different from the first metal, and a third conductive layer (24) that is formed on the second conductive layer (22) and made of a third metal different from the first metal are formed sequentially; the dielectric layer (32) formed on the lower electrode (30); and the upper electrode (34) formed on the capacitor dielectric layer (32). |
申请公布号 |
EP1852893(A3) |
申请公布日期 |
2014.09.10 |
申请号 |
EP20070114564 |
申请日期 |
2002.04.09 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
WANG, WENSHENG;FUJIKI, MITSUSHI;NAKAMURA, KO |
分类号 |
H01L21/02;H01L23/52;H01L21/3205;H01L21/8246;H01L27/105;H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|