A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF A SEMICONDUCTOR SUBSTRATE

摘要

A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.