发明名称 |
Transistor and method for fabricating the same |
摘要 |
<p>A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and a metallic nanoparticle grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of at least one charges in the channel region.</p> |
申请公布号 |
EP2775542(A1) |
申请公布日期 |
2014.09.10 |
申请号 |
EP20140158168 |
申请日期 |
2014.03.06 |
申请人 |
SK INNOVATION CO., LTD. |
发明人 |
KIM, JUN-HYUNG;LEE, YOUNG-KEUN;YOU, HONG;AN, SUNG-JAE;KIM, TAE-HEE |
分类号 |
H01L51/05;H01L51/00 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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