发明名称 Transistor and method for fabricating the same
摘要 <p>A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and a metallic nanoparticle grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of at least one charges in the channel region.</p>
申请公布号 EP2775542(A1) 申请公布日期 2014.09.10
申请号 EP20140158168 申请日期 2014.03.06
申请人 SK INNOVATION CO., LTD. 发明人 KIM, JUN-HYUNG;LEE, YOUNG-KEUN;YOU, HONG;AN, SUNG-JAE;KIM, TAE-HEE
分类号 H01L51/05;H01L51/00 主分类号 H01L51/05
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