| 摘要 |
<p>The present invention concerns a crucible (1) for the production of crystalline semiconducting material ingots, such as silicon, said crucible comprising peripheral side walls (1 b) and a floor (1 a) at least a portion of said floor being coated with a top layer (2), characterized in that, said top layer (2) has a thickness, ´, of at least 500 µm and in that, at a deformation temperature below 1400°C said top layer is plastically or viscously deformable.</p> |
