| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer compound which can constitute a photoresist composition having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of an acid generated from an acid generator is weak, and having favorable sensitivity, the photoresist composition using the polymer compound and a resist pattern formation method using the photoresist composition. <P>SOLUTION: The polymer compound having alkali solubility changeable by the action of acid and contains a structural unit (a1) derived from a compound expressed by general formula (2) (in the formula, R<SB>1</SB>expresses a ≤20C aliphatic cyclic group, (n) expresses integers of 0 or 1-5, R<SB>2</SB>expresses hydrogen atom, fluorine atom or a ≤20C lower alkyl group or a ≤20C fluorinated lower alkyl group) and a structural unit (a3) derived from (meth)acrylic ester containing a lactone-containing single ring or polycyclic group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
