| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which indicates a normally-off characteristic and is operable at a high voltage.SOLUTION: This field effect transistor 10 comprises a nitride semiconductor multilayered body 15 having nitrogen polarity, a gate electrode 16, a source electrode 17 and a drain electrode 18. The nitride semiconductor multilayered body 15 is a multilayered body in which an electron supply layer 12, an electron traveling layer 13 and a barrier layer 14 are epitaxially laminated on a substrate 11 in this order. The gate electrode 16 is disposed on the barrier layer 14 and the nitride semiconductor multilayered body 15 other than a lower part of the gate electrode 16 has a recessed structure. The source electrode 17 and the drain electrode 18 are disposed on a bottom surface of the recessed structure, and a hetero-junction 19 is formed at an interface between the electron supply layer 12 and the electron traveling layer 13. |
