| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, wherein the number of processes of flattening processing by CMP is reduced to reduce variance in thickness of a stopper film used for the flattening processing. SOLUTION: The method of manufacturing the semiconductor device includes steps of: filling a first groove h1 and a second groove h2 with a polysilicon film 12, and covering an element formation region 4 with the polysilicon film 12; removing the polysilicon film 12 from the element formation region 4 by etching the polysilicon film 12 with a silicon oxide film 9 as a mask; filling the first groove h1 and second groove h2 with a polysilicon film 13, and covering the element formation region 4 with the polysilicon film 13 after removing the polysilicon film 12 from the element formation region 4; and flattening an upper surface of the silicon oxide film 13 by CMP. COPYRIGHT: (C)2011,JPO&INPIT |
