发明名称 Mask pattern analysis apparatus and method for analyzing mask pattern
摘要 A pattern analysis method includes the steps of: grouping a plurality of polygons in a circuit layout into a plurality of polygon groups; locating a potential defect area of each polygon group according to an aerial image of the circuit layout; determining a representing point of the potential defect area of each polygon group; determining representing points of the plurality of polygons in each polygon group; and comparing a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in one of the polygon groups with a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in another of the polygon groups. The steps aforesaid are executed by a processor in a computer system.
申请公布号 US8831333(B2) 申请公布日期 2014.09.09
申请号 US201213495873 申请日期 2012.06.13
申请人 Nanya Technology Corporation 发明人 Fu Kuo Kuei
分类号 G06K9/00 主分类号 G06K9/00
代理机构 Bacon & Thomas PLLC 代理人 Marquez Juan Carlos A.;Bacon & Thomas PLLC
主权项 1. A mask pattern analysis apparatus, comprising: a processor, configured to: group a plurality of polygons in a circuit layout into a plurality of polygon groups;locate a potential defect area of each polygon group according to an aerial image of the circuit layout;determine a representing point of the potential defect area of each polygon group;determine representing points of the plurality of polygons in each polygon group; andcompare a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in one of the polygon groups with a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in another of the polygon groups.
地址 Tao-Yuan Hsien TW