| 发明名称 |
Multi-level memory cell with continuously tunable switching |
| 摘要 |
The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance. |
| 申请公布号 |
US8830727(B2) |
申请公布日期 |
2014.09.09 |
| 申请号 |
US201113278581 |
申请日期 |
2011.10.21 |
| 申请人 |
Hewlett-Packard Development Company, L.P. |
发明人 |
Yi Wei;Miao Feng;Yang Jianhua |
| 分类号 |
G11C11/00;G11C11/56;G11C27/00;G11C29/50;G11C13/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A data storage device, comprising:
a multi-level memory cell; and write circuitry configured to write data to the multi-level memory cell, the write circuitry comprising compliance circuitry configured to implement continuously tunable switching; wherein the write circuitry is configured to select a compliance mode for the switching, the compliance mode comprising current compliance or voltage compliance. |
| 地址 |
Houston TX US |
