发明名称 Methods and apparatus for soft data generation for memory devices
摘要 Methods and apparatus are provided for soft data generation for memory devices. At least one soft data value is generated for a memory device, by obtaining at least one hard read value; and generating the soft data value associated with the at least one hard read value based on statistics for reading the hard read value. The hard read value may be one or more of data bits, voltage levels, current levels and resistance levels. The generated soft data value may be one or more of (i) a soft read value that is used to generate one or more log likelihood ratios, and (ii) one or more log likelihood ratios. The statistics comprise one or more of bit-based statistics and cell-based statistics. The statistics may also optionally comprise pattern-dependent disturbance of at least one aggressor cell on the target cell, as well as location-specific statistics. At least one soft data value can be generated for a memory device, by obtaining a soft read value; and generating the soft data value associated with the soft read value based on statistics for reading the soft read value, wherein the statistics comprise one or more of location-specific statistics and pattern-dependent statistics.
申请公布号 US8830748(B2) 申请公布日期 2014.09.09
申请号 US200913063888 申请日期 2009.09.30
申请人 LSI Corporation 发明人 Haratsch Erich F.;Ivkovic Milos;Krachkovsky Victor;Miladinovic Nenad;Vityaev Andrei;Williamson Clifton;Yen Johnson
分类号 G11C16/06 主分类号 G11C16/06
代理机构 Ryan, Mason & Lewis, LLP 代理人 Ryan, Mason & Lewis, LLP
主权项 1. A method for generating at least one of one or more of a reliability value and a log likelihood ratio for a memory device, said method comprising the steps of: obtaining at least one read value; and generating said at least one of one or more of a reliability value and a log likelihood ratio associated with said at least one read value as a function of said obtained at least one read value and statistics for reading values from said memory device.
地址 San Jose CA US