Non-volatile memory with resistive access component

摘要

Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.

主权项

1. An apparatus comprising:
a memory element including memory material configured to store information; andan access component coupled in series with the memory element and configured to enable conduction of current through the memory element, the access component includes a material, wherein the material excludes silicon and includes a bipolar switching material, and the access component includes a conduction path formed by one of ions and vacancies of the material of the access component when a voltage difference across the memory element and the access component exceeds a voltage value; and
an electrode between the memory element and the access component.