发明名称 |
Multilayer printed wiring board |
摘要 |
A multilayer printed wiring board includes a core base material having a penetrating portion, a low-thermal-expansion substrate accommodated inside the penetrating portion of the core base material and having a first surface for mounting a semiconductor element and a second surface on the opposite side of the first surface, a first through-hole conductor provided inside the low-thermal-expansion substrate and provided for electrical connection between the first surface and the second surface of the low-thermal-expansion substrate, a filler filled in a gap between the low-thermal-expansion substrate and an inner wall of the core base material, and a wiring layer formed on at least one of the first surface and the second surface of the low-thermal-expansion substrate and having a resin insulation layer and a conductive layer. The wiring layer has a via conductor connecting the first through-hole conductor and the conductive layer. |
申请公布号 |
US8829355(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US200912609447 |
申请日期 |
2009.10.30 |
申请人 |
Ibiden Co., Ltd. |
发明人 |
Kariya Takashi;Yoshikawa Kazuhiro;Komatsu Daiki;Bhandari Ramesh |
分类号 |
H05K1/00;H05K1/03;H05K1/09;H05K1/18;H01L23/538;H01L23/13;H01L21/48;H05K3/46;H05K1/02 |
主分类号 |
H05K1/00 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A multilayer printed wiring board comprising: a substrate comprising a core base material and having a penetrating portion; a low-thermal-expansion substrate comprising a low-thermal-expansion resin and accommodated inside the penetrating portion of the substrate, the low-thermal-expansion substrate having a first surface for mounting a semiconductor element and a second surface on the opposite side of the first surface; a first through-hole conductor provided inside the low-thermal-expansion substrate and configured to provide electrical connection between the first surface and the second surface of the low-thermal-expansion substrate; a filler filling a gap between the low-thermal-expansion substrate and an inner wall of the substrate; and a buildup layer formed on at least one of the first surface and the second surface of the low-thermal-expansion substrate and comprising a resin insulation layer and a conductive layer, wherein the buildup layer has a via conductor connecting the first through-hole conductor in the low-thermal-expansion substrate and the conductive layer in the buildup layer, the low-thermal-expansion resin of the low-thermal-expansion substrate has a thermal expansion coefficient in a range of 2.5 to 10 ppm, the buildup layer is formed on the first surface of the low-thermal-expansion substrate, and at least a portion of the buildup layer and at least a portion of the conductive layer are positioned inside the penetrating portion of the substrate to mount a semiconductor thereon, wherein the first through-hole conductor is tapered in a first direction, and the via conductor formed in the buildup layer is tapered in a second direction opposite to the first direction. |
地址 |
Ogaki-shi JP |