Production of single-crystal semiconductor material using a nanostructure template

摘要

A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to form a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

主权项

1. A method of producing a single-crystal semiconductor material, comprising the steps of:
(a) providing a template material comprising a layer of semiconductor material; (b) creating a mask on top of the template material, the mask comprising at least one nano-dot of mask material; (c) etching the template material using the mask to form at least one etched nanostructure in the template material, the at least one etched nanostructure being formed from template material located underneath the at least one nano-dot; and (d) growing the single-crystal semiconductor material onto the at least one nanostructure, wherein each nanostructure comprises a nanocolumn, wherein the method further comprises the step of subjecting the nanostructures to a nitridation process, the nitridation process preventing the lateral growth of semiconductor material at the bottom of the structures.