| 发明名称 | Method for making a substantially planar micro-fluid ejection head | ||
| 摘要 | A process for making a substantially planar micro-fluid ejection head is disclosed, and includes depositing a basic solution on a first surface of a device substrate. The first surface having the basic solution deposited thereon is contacted together with a surface of a support material for a duration ranging from about 1 minute to about 15 minutes, at a temperature ranging from about 20° C. to about 90° C. so that the first surface having the basic solution deposited thereon and the surface of the support material form a bond therebetween to hermetically seal the support material and the device substrate to one another. Both the substrate and the at least one surface of the support comprise silicon, and at least one of the device substrate and the at least one surface of the support material is substantially composed of silicon. | ||
| 申请公布号 | US8826502(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201012786457 | 申请日期 | 2010.05.25 |
| 申请人 | Funai Electric Co., Ltd. | 发明人 | Bernard David Laurier;Dryer Paul William;McNees Andrew Lee |
| 分类号 | H04R17/00;B41J2/16;C09J5/02;B41J2/14 | 主分类号 | H04R17/00 |
| 代理机构 | Amster, Rothstein & Ebenstein LLP | 代理人 | Amster, Rothstein & Ebenstein LLP |
| 主权项 | 1. A process for making a substantially planar micro-fluid ejection head comprising: depositing a basic solution on a first surface of a device substrate having at least one fluid flow channel slot therein and at least one micro-fluid ejection device formed adjacent to a second surface thereof; contacting the first surface having the basic solution deposited thereon together with a surface of a support material for a duration ranging from about 1 minute to about 15 minutes, at a temperature ranging from about 20° C. to about 90° C. so that the first surface having the basic solution deposited thereon and the surface of the support material form a bond therebetween thereby hermetically sealing the support material and the device substrate to one another, wherein both the substrate and the at least one surface of the support comprise silicon, and wherein at least one of the device substrate and the at least one surface of the support material is substantially composed of silicon; and attaching a flow feature material having at least one fluid flow channel formed therein to the second surface of the device substrate. | ||
| 地址 | Osaka JP | ||