| 摘要 |
A semiconductor package includes a semiconductor element, a capacitor, and a package substrate. The capacitor supplies transient current to the semiconductor element. The semiconductor element and the capacitor are mounted on the package substrate. The semiconductor element includes an integrated circuit, a first connecting part, and a second connecting part. The capacitor includes a third connecting part and a fourth connecting part. The package substrate includes a first metallic layer, a second metallic layer, and a dielectric layer. The first metallic layer includes a first conductive region, a second conductive region, a third conductive region, and a fourth conductive region. The first conductive region is connected via a fifth connecting part to the second metallic layer. The third conductive region is connected via a sixth connecting part to the second metallic layer. The second and fourth conductive regions are connected to each other inside the first metallic layer. |
| 主权项 |
1. A semiconductor package comprising:
a semiconductor element; a capacitor that supplies transient current to the semiconductor element; and a package substrate on which the semiconductor element and the capacitor are mounted, wherein the semiconductor element includes
an integrated circuit,a first connecting part that connects the integrated circuit to one of an external power supply potential and an external reference potential, anda second connecting part that connects the integrated circuit to the other one of the power supply potential and the reference potential, wherein the capacitor includes
a third connecting part that is connected to one of the power supply potential and the reference potential, anda fourth connecting part that is connected to the other one of the power supply potential and the reference potential, wherein the package substrate includes
a first metallic layer,a second metallic layer, anda dielectric layer that is arranged between the first metallic layer and the second metallic layer, wherein the first metallic layer includes
a first conductive region in which one of the first connecting part and the second connecting part of the semiconductor element is mounted,a second conductive region in which the other one of the first connecting part and the second connecting part of the semiconductor element is mounted,a third conductive region in which one of the third connecting part and the fourth connecting part of the capacitor is mounted, anda fourth conductive region in which the other one of the third connecting part and the fourth connecting part of the capacitor is mounted, wherein the first conductive region is connected via a fifth connecting part to the second metallic layer, wherein the third conductive region is connected via a sixth connecting part to the second metallic layer, and wherein the second conductive region and the fourth conductive region are connected to each other inside the first metallic layer. |
