Spacer profile engineering using films with continuously increased etch rate from inner to outer surface

摘要

Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode and substrate, the spacer layer having a first surface nearest the gate electrode and substrate, a second surface furthest from the gate electrode and substrate, and a continuously increasing etch rate from the first surface to the second surface, and etching the spacer layer to form a spacer on each side of the gate electrode. Embodiments further include forming the spacer layer by depositing a spacer material and continuously decreasing the density of the spacer material during deposition or depositing a carbon-containing spacer material and causing a gradient of carbon content in the spacer layer.

主权项

1. A method comprising:
forming a gate electrode on a substrate; forming a spacer layer over the gate electrode and substrate having a first surface nearest the gate electrode and substrate and a second surface furthest from the gate electrode and substrate, by depositing a spacer material using ozone (O3) and tetraethyl orthosilicate (TEOS) as precursors and continuously increasing the TEOS while maintaining a constant flow of O3 or by depositing a spacer material comprising carbon and causing a gradient of carbon content in the spacer layer by causing carbon depletion at the second surface of the spacer layer, the continuously increasing TEOS or gradient of carbon content causing a continuously increasing etch rate from the first surface to the second surface; and etching the spacer layer to form a tapered spacer on each side of the gate electrode.