Semiconductor device and method of manufacture

摘要

A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner, an outgassing process is utilized to remove any residual precursor material that may be left over from the deposition of the dielectric liner. After the outgassing process, the dielectric liner may be etched, and the trench may be filled with a dielectric material.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming an opening in a substrate; lining the opening with a first dielectric material; degassing the first dielectric material to form a degassed dielectric material; and performing a first self-limiting etch on the degassed dielectric material.