Multi-drain semiconductor power device and edge-termination structure thereof

摘要

An embodiment of a semiconductor power device provided with: a structural body made of semiconductor material with a first conductivity, having an active area housing one or more elementary electronic components and an edge area delimiting externally the active area; and charge-balance structures, constituted by regions doped with a second conductivity opposite to the first conductivity, extending through the structural body both in the active area and in the edge area in order to create a substantial charge balance. The charge-balance structures are columnar walls extending in strips parallel to one another, without any mutual intersections, in the active area and in the edge area.

主权项

1. A method, comprising:
forming an active region in a layer of a first conductivity type adjacent to a corner region of the layer; forming an equipotential ring of the first conductivity type surrounding the active region and extending through the corner region; forming a plurality of charge balancing structures of a second conductivity type extending across the active region and into the corner region, wherein the charge balancing structures terminate a substantially uniform distance from the equipotential ring and do not intersect another charge balancing structure; and forming a lightly doped semiconductor region of the second conductivity type at a surface of the layer that extends from the active region and terminates a substantially uniform distance from the equipotential ring, wherein the ends of the charge balancing structures extend beyond the lightly doped semiconductor region.