发明名称 Semiconductor device and method
摘要 An electronic device and fabrication of an electronic device. One embodiment provides applying a paste including electrically conductive particles to a surface of a semiconductor wafer. The semiconductor wafer is singulated with the electrically conductive particles for obtaining a plurality of semiconductor chips. At least one of the plurality of semiconductor chips is placed over a carrier with the electrically conductive particles facing the carrier. The electrically conductive particles are heated until the at least one semiconductor chip adheres to the carrier.
申请公布号 US8828804(B2) 申请公布日期 2014.09.09
申请号 US200812112807 申请日期 2008.04.30
申请人 Infineon Technologies AG 发明人 Nikitin Ivan;Heinrich Alexander;Landau Stefan
分类号 H01L21/00 主分类号 H01L21/00
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. A method, comprising: applying electrically conductive particles to a surface of a semiconductor wafer; singulating the semiconductor wafer with the electrically conductive particles for obtaining a plurality of semiconductor chips; placing at least one of the plurality of semiconductor chips over a carrier with the electrically conductive particles facing the carrier; and sintering the electrically conductive particles at a temperature that is lower than the melting temperature of a material the electrically conductive particles are made of until the at least one semiconductor chip adheres to the carrier.
地址 Neubiberg DE