发明名称 |
Semiconductor device and method |
摘要 |
An electronic device and fabrication of an electronic device. One embodiment provides applying a paste including electrically conductive particles to a surface of a semiconductor wafer. The semiconductor wafer is singulated with the electrically conductive particles for obtaining a plurality of semiconductor chips. At least one of the plurality of semiconductor chips is placed over a carrier with the electrically conductive particles facing the carrier. The electrically conductive particles are heated until the at least one semiconductor chip adheres to the carrier. |
申请公布号 |
US8828804(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US200812112807 |
申请日期 |
2008.04.30 |
申请人 |
Infineon Technologies AG |
发明人 |
Nikitin Ivan;Heinrich Alexander;Landau Stefan |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. A method, comprising:
applying electrically conductive particles to a surface of a semiconductor wafer; singulating the semiconductor wafer with the electrically conductive particles for obtaining a plurality of semiconductor chips; placing at least one of the plurality of semiconductor chips over a carrier with the electrically conductive particles facing the carrier; and sintering the electrically conductive particles at a temperature that is lower than the melting temperature of a material the electrically conductive particles are made of until the at least one semiconductor chip adheres to the carrier. |
地址 |
Neubiberg DE |