| 发明名称 | Method of manufacturing light emitting device | ||
| 摘要 | Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer. | ||
| 申请公布号 | US8828751(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201313844569 | 申请日期 | 2013.03.15 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Rhee Do Young;Sakong Tan;Kim Ki Sung;Yoon Suk Ho;Kim Young Sun;Kim Sung Tae |
| 分类号 | H01L21/00;H01L33/00;H01L33/26 | 主分类号 | H01L21/00 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A method of manufacturing a semiconductor light emitting device, the method comprising forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate, wherein the forming of the light emitting structure comprises steps of: (a) forming a protective layer after a portion of the light emitting structure is formed; (b) forming a sacrificial layer on the protective layer; and (c) continuously forming a further portion of the light emitting structure on the sacrificial layer, wherein the sacrificial layer is entirely removed prior to or during the forming of the further portion of the light emitting structure in step (c). | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||