Semiconductor memory device

摘要

According to one embodiment, a semiconductor memory device includes a memory cells, a selection transistor, a memory string, a block, and a transfer circuit. The memory cells are stacked on a semiconductor substrate. In the memory string, the memory cells and the selection transistor are connected in series. The block includes a plurality of memory strings. In data write and read, the transfer circuit transfers a positive voltage to a select gate line associated with a selected memory string in a selected block, and a negative voltage to a select gate line associated with an unselected memory string in the selected block, and to a select gate line associated with an unselected block.

主权项

1. A semiconductor memory device comprising:
a plurality of memory cells stacked above a semiconductor substrate; a selection transistor; a memory string in which the plurality of memory cells are connected in series, and the selection transistor is connected in series with the memory cells; a block including a plurality of memory strings; a word line electrically coupled to a control gate of one of the memory cells; a select gate line electrically coupled to a gate of the selection transistor; a bit line electrically coupled to one of the memory cells; and a circuit configured to apply, in data write or read, a positive voltage to a select gate line of a selected memory string in a selected block, the circuit being configured to apply a negative voltage to a select gate line of an unselected memory string in the selected block, the circuit being configured to apply the negative voltage to a select gate line of an unselected block.