| 发明名称 |
Method of impurity introduction and controlled surface removal |
| 摘要 |
A method of introducing dopants into a semiconductor wafer includes implanting the dopants into a region below a surface of the semiconductor wafer using an ion beam to form a first implanted layer. The dopants when activated causing a conductivity of the implanted layer to be either of N-type or P-type. The first implanted layer is characterized by a peak dopant concentration at a first depth below the surface of the semiconductor wafer. The method also includes removing a layer from the semiconductor wafer surface, wherein said layer includes a portion of said dopants. |
| 申请公布号 |
US8828854(B2) |
申请公布日期 |
2014.09.09 |
| 申请号 |
US201313774092 |
申请日期 |
2013.02.22 |
| 申请人 |
|
发明人 |
Chiu Tzu-Yin |
| 分类号 |
C23C12/00;H01L21/223;H01L21/265;H01L21/3065 |
主分类号 |
C23C12/00 |
| 代理机构 |
Kilpatrick Townsend & Stockton LLP |
代理人 |
Kilpatrick Townsend & Stockton LLP |
| 主权项 |
1. A method of introducing dopants into a semiconductor wafer, the method comprising:
implanting the dopants into a region below a surface of the semiconductor wafer using an ion beam to form a first implanted layer, said dopants when activated causing a conductivity of the implanted layer to be either of N-type or P-type; the first implanted layer having a peak dopant concentration at a first depth below the surface of the semiconductor wafer; and removing a layer from the semiconductor wafer surface, said layer comprising a portion of said dopants; wherein the implanting of the dopants and the removal of the wafer surface layer are carried out by the same ion beam; wherein the implanting of the dopants and the removal of the wafer surface layer are carried out concurrently. |
| 地址 |
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