发明名称 Apparatus for fabricating thin film transistor array substrate
摘要 The present invention relates to an apparatus and a method of fabricating a thin film transistor array substrate. The apparatus includes a dip strip part for stripping a photo-resist pattern and a thin film formed on a substrate by using a stripper; a removing part for removing residual photo-resist and thin film from the substrate; and a jet strip part for jetting the stripper to remove residual particles of photo-resist and thin film left on the substrate. The method of fabricating includes dipping a substrate in a stripper, wherein the substrate has a photo-resist pattern and a thin film, the thin film being formed on an entire surface of the substrate so as to cover the photo-resist pattern; removing residual photo-resist and thin film using the stripper; and removing particles of residual photo-resist and thin film left on the substrate.
申请公布号 US8828149(B2) 申请公布日期 2014.09.09
申请号 US201012880761 申请日期 2010.09.13
申请人 LG Display Co., Ltd 发明人 Kwon Oh Nam;Cho Heung Lyul
分类号 G03F7/26;G03F7/42;H01L27/12 主分类号 G03F7/26
代理机构 McKenna Long & Aldridge 代理人 McKenna Long & Aldridge
主权项 1. An apparatus for fabricating a thin film transistor array substrate of a liquid crystal display device comprising: a dip strip component having a first container in which a first stripper is contained and that strips a photo-resist pattern and a transparent electrode film on the photo-resist pattern formed on only one surface of a substrate to form a transparent electrode pattern on the substrate; a first jet strip component having a high temperature and high pressure jet nozzle and that removes a residual of the photo-resist pattern-and a residual of the transparent electrode film stripped by the dip strip component; and a second jet strip component having a plurality of jet nozzles and that removes residual photo-resist particles left on the only one surface of the substrate after the residual of the photo-resist pattern and the residual of the transparent electrode film are removed by the first jet strip component, wherein the first jet strip component includes: the high temperature and high pressure jet nozzle directly coupled to a second container;the second container apart from the first container and supplying a second stripper directly to the high temperature and high pressure jet nozzle;a first pump for restoring the second stripper, jetted by the high temperature and high pressure jet nozzle, while directly coupled to the second container; anda first filter for filtering impurities included in the second stripper, and wherein the second jet strip component includes:the plurality of jet nozzles directly coupled to a third container for jetting a third stripper onto the substrate;the third container apart from the second container and supplying the third stripper directly to the plurality of jet nozzles;a second pump for restoring the third stripper, jetted by the plurality of jet nozzles, while directly coupled to the third container; anda second filter for filtering impurities included in the third stripper.
地址 Seoul KR