| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a first pillar-shaped silicon layer formed on a planar silicon layer, a gate insulating film formed around the first pillar-shaped silicon layer, a first gate electrode formed around the gate insulating film, a gate line connected to the first gate electrode, a first first-conductivity-type diffusion layer formed in an upper portion of the first pillar-shaped silicon layer, a second first-conductivity-type diffusion layer formed in a lower portion of the first pillar-shaped silicon layer and an upper portion of the planar silicon layer, a first sidewall having a laminated structure of an insulating film and polysilicon and being formed on an upper sidewall of the first pillar-shaped silicon layer and an upper portion of the first gate electrode, and a first contact formed on the first first-conductivity-type diffusion layer and the first sidewall. | ||
| 申请公布号 | US8829601(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201313891584 | 申请日期 | 2013.05.10 |
| 申请人 | Unisantis Electronics Singapore Pte. Ltd. | 发明人 | Masuoka Fujio;Nakamura Hiroki |
| 分类号 | H01L29/76;H01L29/78;H01L27/092;H01L29/66;H01L21/8238 | 主分类号 | H01L29/76 |
| 代理机构 | Brinks Gilson & Lione | 代理人 | Brinks Gilson & Lione |
| 主权项 | 1. A semiconductor device comprising: a planar silicon layer formed on a silicon substrate; a first pillar-shaped silicon layer formed on the planar silicon layer; a gate insulating film formed around the first pillar-shaped silicon layer; a first gate electrode formed around the gate insulating film; a gate line connected to the first gate electrode; a first first-conductivity-type diffusion layer formed in an upper portion of the first pillar-shaped silicon layer; a second first-conductivity-type diffusion layer formed in a lower portion of the first pillar-shaped silicon layer and in an upper portion of the planar silicon layer; a first sidewall having a laminated structure of an insulating film and polysilicon and being formed on an upper sidewall of the first pillar-shaped silicon layer and on an upper portion of the first gate electrode; and a first contact formed on the first first-conductivity-type diffusion layer and the first sidewall, wherein the first contact is connected to the polysilicon of the first sidewall; and the conductivity type of the polysilicon of the first sidewall is the first conductivity type. | ||
| 地址 | Peninsula Plaza SG | ||