Power semiconductor device

摘要

Provided is a power semiconductor device including a semiconductor substrate, in which a current flows in a thickness direction of the semiconductor substrate. The semiconductor substrate includes a resistance control structure configured so that a resistance to the current becomes higher in a central portion of the semiconductor substrate than a peripheral portion of the semiconductor substrate.

主权项

1. A power semiconductor device comprising a semiconductor substrate in which current flows in a thickness direction of said semiconductor substrate,
wherein said semiconductor substrate includes: a first semiconductor layer of a first conductivity type which extends laterally to run across a central portion of said semiconductor substrate and a peripheral portion of said semiconductor substrate laterally surrounding said central portion; and a second semiconductor layer of a second conductivity type which faces said first semiconductor layer in said thickness direction; said second semiconductor layer has a form to be located in said peripheral portion but not located in said central portion; and said second semiconductor layer provides a resistance control structure having a resistance to current higher in said central portion than said peripheral portion.