| 发明名称 | Thin film transistor | ||
| 摘要 | A thin film transistor (TFT) includes a gate, a semiconductor layer, an insulating layer, a source, a drain, and a current reduction layer. The insulating layer is disposed between the gate and the semiconductor layer. The source is connected to the semiconductor layer. The drain is connected to the semiconductor layer, and the source and the drain are separated from each other. The current reduction layer has a first part and a second part. The first part is disposed between the semiconductor layer and at least a part of the source, and the second part is disposed between the semiconductor layer and at least a part of the drain. | ||
| 申请公布号 | US8829520(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201213685638 | 申请日期 | 2012.11.26 |
| 申请人 | E Ink Holdings Inc. | 发明人 | Wang Henry;Yeh Chia-Chun;Tsai Xue-Hung;Shinn Ted-Hong |
| 分类号 | H01L29/04;H01L29/417;H01L29/786 | 主分类号 | H01L29/04 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A thin film transistor comprising: a gate; a semiconductor layer; an insulating layer disposed between the gate and the semiconductor layer; a source connected to the semiconductor layer; a drain connected to the semiconductor layer, the source and the drain being separated from each other; and a current reduction dielectric layer having a first part and a second part, wherein the first part is disposed between the semiconductor layer and at least a part of the source, and the second part is disposed between the semiconductor layer and at least a part of the drain. | ||
| 地址 | Hsinchu TW | ||