发明名称 White organic light emitting device
摘要 The white organic light emitting device for improved efficiencies includes an anode and a cathode opposing each other on a substrate, a charge generation layer between the anode and the cathode, a first stack and a second stack interposed between the anode and the charge generation layer, and between the charge generation layer and the cathode, respectively, wherein at least one of a first hole transport layer and a second hole transport layer has a triplet energy level higher than a triplet energy level of the light emitting layer adjacent thereto, and a difference between a triplet energy level and a singlet energy level of 0.01 eV to 0.6 eV.
申请公布号 US8829504(B2) 申请公布日期 2014.09.09
申请号 US201213603590 申请日期 2012.09.05
申请人 LG Display Co., Ltd. 发明人 Song Ki-Woog;Pieh Sung-Hoon
分类号 H01L35/24 主分类号 H01L35/24
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A white organic light emitting device comprising: an anode and a cathode opposing each other on a substrate; a charge generation layer between the anode and the cathode; a first stack interposed between the anode and the charge generation layer, the first stack including a first hole transport layer, a first light emitting layer emitting blue light and a first electron transport layer; and a second stack interposed between the charge generation layer and the cathode, the second stack including a second hole transport layer, a second light emitting layer formed by doping one host with a phosphorescent dopant, and a second electron transport layer, wherein at least one of the first hole transport layer and the second hole transport layer has a triplet energy level higher than a triplet energy level of the light emitting layer adjacent thereto, and a difference (ΔEst) between a triplet energy level and a singlet energy level of 0.35 eV to 0.6 eV, wherein the first hole transport layer has a triplet energy level that is 0.01 eV to 0.4 eV higher than a triplet energy level of the first light emitting layer and, wherein the triplet energy level of the first hole transport layer is 2.6 eV to 2.73 eV and wherein the band gap energy of the first hole transport layer is 3.0 eV to 3.4 eV.
地址 Seoul KR