Semiconductor surface treating agent composition and method for treating semiconductor surface using the semiconductor surface treating agent composition

摘要

An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.

主权项

1. A semiconductor surface treating agent composition, comprising:
a compound generating a fluoride ion in water, a carbon radical generating agent, and water, wherein the carbon radical generating agent is selected from the group consisting of azonitrile type carbon radical generating agents, azoamide type carbon radical generating agents, chain-like azoamidine type carbon radical generating agents, cyclic azoamidine type carbon radical generating agents, azoester type carbon radical generating agents, azonitrile carboxylic acid type carbon radical generating agents, azoalkyl type carbon radical generating agents, macroazo type carbon radical generating agents, benzoin alkyl ether type carbon radical generating agents, benzylketal type carbon radical generating agents, benzophenone type carbon radical generating agents, aminobenzoate ester type carbon radical generating agents, 1, 2-hydroxyalkylphenone type carbon radical generating agents, 1, 2-aminoalkylphenone type carbon radical generating agents, acylphosphin oxide type carbon radical generating agents, anthraquinone type carbon radical generating agents, thioxanthone type carbon radical generating agents, acridone type carbon radical generating agents, biimidazole type carbon radical generating agents, oxime ester type carbon radical generating agents and titanocene type carbon radical generating agents.