发明名称 Local voltage control for isolated transistor arrays
摘要 Self-biasing transistor switching circuitry includes a main transistor, a biasing transistor, a first capacitor, and a second capacitor. The body of the main transistor is isolated from the gate, the drain, and the source of the main transistor by an insulating layer. The first capacitor is coupled between the source and the gate of the main transistor. The second capacitor is coupled between the source and the body of the main transistor. The body and the drain of the main transistor are coupled together. The gate and the drain of the biasing transistor are coupled to the gate of the main transistor. The drain of the biasing transistor is coupled to the drain of the main transistor. The self-biasing transistor switching circuitry is adapted to receive an oscillating signal at the drain of the main transistor, and use the oscillating signal to appropriately bias the main transistor.
申请公布号 US8829981(B2) 申请公布日期 2014.09.09
申请号 US201313889583 申请日期 2013.05.08
申请人 RF Micro Devices, Inc. 发明人 Peachey Nathaniel;Nieri Ralph Christopher
分类号 G05F1/10;G05F3/02 主分类号 G05F1/10
代理机构 Withrow & Terranova, P.L.L.C. 代理人 Withrow & Terranova, P.L.L.C.
主权项 1. Circuitry comprising: a main transistor including a gate contact, a drain contact, a source contact, and a body contact, wherein the body contact and the drain contact of the main transistor are coupled together; and biasing circuitry comprising: a biasing transistor including a gate contact, a drain contact, a source contact, and a body contact, wherein the gate contact and the source contact of the biasing transistor are coupled to the gate contact of the main transistor, the drain contact of the biasing transistor is coupled to the drain contact of the main transistor, and the body contact of the biasing transistor is coupled to the body contact of the main transistor;a first capacitor coupled between the gate contact and the source contact of the main transistor; anda second capacitor coupled between the source contact and the body contact of the main transistor.
地址 Greensboro NC US