发明名称 Manufacturing method for dual damascene structure
摘要 A manufacturing method for a dual damascene structure first includes providing a substrate having at least a dielectric layer, a first hard mask layer, a first cap layer, a second hard mask layer, and a second cap layer sequentially formed thereon, performing a first double patterning process to form a plurality of first trench openings and second trench openings in the second cap layer and the second hard mask, and the first layer being exposed in bottoms of the first trench openings and the second trench openings, performing a second double patterning process to form a plurality of first via openings and second via openings in the first cap layer and the first hard mask layer, and transferring the first trench openings, the second trench openings, the first via openings, and the second via openings to the dielectric layer to form a plurality of dual damascene openings.
申请公布号 US8828878(B2) 申请公布日期 2014.09.09
申请号 US201113218458 申请日期 2011.08.26
申请人 United Microelectronics Corp. 发明人 Liao Duan Quan;Chen Yikun;Zhu Xiao Zhong;Tey Ching-Hwa;Tsai Chen-Hua;Lai Yu-Tsung
分类号 H01L21/4763;H01L21/44;H01L21/311;H01L21/768 主分类号 H01L21/4763
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A manufacturing method for a dual damascene structure, comprising steps of: providing a substrate having at least a dielectric layer, a first hard mask layer, a first cap layer, a second hard mask layer, and a second cap layer sequentially formed thereon; performing a first double patterning process to sequentially form a plurality of first trench openings and a plurality of second trench openings in the second cap layer and the second hard mask and expose the first cap layer, wherein the first trench openings respectively comprise a first end of the first trench opening and a second end of the first trench opening, and the second trench openings respectively comprise a first end of the second trench opening and a second end of the second trench opening; performing a second double patterning process to sequentially form a plurality of first via openings and a plurality of second via openings in the first cap layer and the first hard mask layer; and transferring the first trench openings, the second trench openings, the first via openings, and the second via openings to the dielectric layer to form a plurality of dual damascene openings.
地址 Science-Based Industrial Park, Hsin-Chu TW