发明名称 |
Method for forming hard mask in semiconductor device fabrication |
摘要 |
A method for forming a hard mask in semiconductor device fabrication comprises: forming first and second patterned material layers on a third material layer, the second patterned material layer only covering the top of predetermined regions of the first patterned material layer; changing a property of exposed top and side portions of the first patterned material layer using the second patterned material layer as a mask, forming property-changed roofs at the exposed top portions of the first patterned material layer and forming property-changed sidewalls with a predetermined width at the exposed side portions of the first patterned material layer; removing the second patterned material layer and portions of the first patterned material layer with exposed tops and an unchanged property located between the property-changed sidewalls, to form the hard mask. |
申请公布号 |
US8828868(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US201113314000 |
申请日期 |
2011.12.07 |
申请人 |
Semiconductor Manufacturing International (Beijing) Corporation |
发明人 |
Hong Zhongshan |
分类号 |
H01L21/033;H01L21/3213 |
主分类号 |
H01L21/033 |
代理机构 |
Koppel, Patrick, Heybl & Philpott |
代理人 |
Koppel, Patrick, Heybl & Philpott ;Ram Michael J. |
主权项 |
1. A method for forming a hard mask in semiconductor device fabrication, comprising:
forming first and second patterned material layers on a third material layer, the second patterned material layer only covering the top of predetermined regions of the first patterned material layer; changing a property of the exposed top and side portions of the first patterned material layer using the second patterned material layer as a mask, so as to form property-changed roofs at the exposed top portions of the first patterned material layer and form property-changed sidewalls with a predetermined width at the exposed side portions of the first patterned material layer; removing the second patterned material layer; and removing portions of the first patterned material layer which have exposed tops and an unchanged property and are located between the property-changed sidewalls, so as to form the hard mask, wherein patterns in the first and second patterned material layers are linear patterns, and at least some patterns in the predetermined regions of the first patterned material layer have linewidths larger than twice the predetermined width. |
地址 |
Beijing CN |