Semiconductor device and method of manufacturing the same

摘要

In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming an amorphous semiconductor film on a substrate; annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film, the annealing including a first annealing performed at a first substrate temperature, and a second annealing performed at a second substrate temperature lower than the first substrate temperature after the first annealing; cooling the substrate between the first annealing and the second annealing to decrease a temperature of the substrate from the first substrate temperature to the second substrate temperature; and forming a transistor whose channel is the polycrystalline semiconductor film.