发明名称 Method of manufacturing isolation structure
摘要 A method of manufacturing an isolation structure includes forming a laminate structure on a substrate. A plurality trenches is formed in the laminate structure. Subsequently a pre-processing is effected to form a hydrophilic thin film having oxygen ions on the inner wall of the trenches. Spin-on-dielectric (SOD) materials are filled into the trenches. The hydrophilic think film having oxygen ions changes the surface tension of the inner wall of the trenches and increases SOD material fluidity.
申请公布号 US8828843(B2) 申请公布日期 2014.09.09
申请号 US201313875442 申请日期 2013.05.02
申请人 Inotera Memories, Inc. 发明人 Hu Yaw-Wen;Hsieh Jung-Chang;Huang Kuen-Shin;Chen Jian-Wei;Chien Ming-Tai
分类号 H01L21/4763;H01L21/762 主分类号 H01L21/4763
代理机构 Rosenberg, Klein & Lee 代理人 Rosenberg, Klein & Lee
主权项 1. A method of manufacturing an isolation structure comprising: forming a laminate structure on a substrate; forming a plurality of trenches in the laminate structure; performing a pretreatment process to form a hydrophilic thin film having oxygen ions on the inner wall of the trenches, wherein the pretreatment process is conducted at about 470° C. to 490° C. for approximately 30 to 50 seconds; filling spin-on-dielectric (SOD) materials into the trenches, wherein the hydrophilic thin film having oxygen ions is formed to change the surface tension of the inner wall of the trenches to increases the fluidity of the SOD materials; and performing a curing process that converts the hydrophilic thin film having oxygen ions and the SOD materials into a silicon oxide layer, wherein the hydrophilic thin film provides oxygen ions in the conversion.
地址 Taoyuan County TW