Lithography using self-assembled polymers

摘要

A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

主权项

1. A method of lithography on a surface of a substrate having a self-assembled polymer layer thereon comprising first and second chemically-distinct domains arranged in a pattern across the layer, the method comprising:
forming a planarization layer over the layer of self-assembled polymer, the planarization layer having a first portion over the first domain and a second portion over the second domain; applying a development etch to the planarization layer to substantially remove the second portion leaving at least part of the first portion as a cap substantially covering the first domain to form capped first domain; substantially removing the second domain from the surface, leaving the capped first domain as a pattern feature on the surface; and transferring the pattern feature to the substrate using the capped first domain as an etch resist.