Substrate processing apparatus and method for manufacturing semiconductor device

摘要

A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

主权项

1. A substrate processing apparatus for supplying a processing gas to a surface of a substrate, for supplying an inactive gas, and for forming a thin film on the surface of the substrate, the substrate processing apparatus comprising:
a processing chamber configured to process substrates stacked in multiple stages in horizontal posture; a processing gas supply unit configured to supply the processing gas to the inside of the processing chamber from a processing gas source; an inactive gas supply unit configured to supply the inactive gas to the inside of the processing chamber from an inactive gas source; an exhaust unit configured to exhaust an atmosphere of the inside of the processing chamber; a preliminary chamber which is formed so as to extend running along an inner wall of the processing chamber in the stacking direction of the substrates, the preliminary chamber being configured to project from an outer radius of the processing chamber outward in a radial direction of the processing chamber, the preliminary chamber being connected to the processing chamber by side walls; wherein:
the processing gas supply unit has a processing gas supply nozzle which is provided inside the preliminary chamber and extends running along an inner wall of the preliminary chamber in the stacking direction of the substrates and is configured to supply the processing gas to the inside of the processing chamber,the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided inside the preliminary chamber and extend running along the inner wall of the preliminary chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof, along the circumferential direction of the substrates, and which are configured to supply the inactive gas to the inside of the processing chamber from the inactive gas source,the inactive gas supply nozzles supply only an inactive gas, andthere are no intervening sources between the inactive gas source and the inactive gas supply nozzles.