发明名称 Semiconductor package and method of manufacturing the same
摘要 A semiconductor package and a method of manufacturing the same are provided, the semiconductor package including a first package unit having a first encapsulant and a first semiconductor element, a second package unit having a second encapsulant and a second semiconductor element, a supporting member interposed between the first and second encapsulant, a plurality of conductors penetrating the first encapsulant, the supporting member and the second encapsulant, and redistribution structures disposed on the first and second encapsulants, wherein the first and second encapsulants are coupled with each other by the supporting member to provide sufficient support and protection to enhance the structure strength of the first and second package units.
申请公布号 US8828796(B1) 申请公布日期 2014.09.09
申请号 US201314085168 申请日期 2013.11.20
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Chi Chieh-Yuan;Chen Wei-Yu;Liu Hung-Wen;Chen Yan-Heng;Hsu Hsi-Chang
分类号 H01L21/44;H01L23/02;H01L23/498 主分类号 H01L21/44
代理机构 Edwards Wildman Palmer LLP 代理人 Edwards Wildman Palmer LLP ;Corless Peter F.;Jensen Steven M.
主权项 1. A semiconductor package, comprising: a first package unit, including a first encapsulant having opposite first and second sides, and a first semiconductor element embedded in the first encapsulant and exposed to the first side; a second package unit, including a second encapsulant having opposite third and fourth sides, and a second semiconductor element embedded in the second encapsulant and exposed to the third side; a supporting member connecting the second side of the first encapsulant to the fourth side of the second encapsulant so as to couple the first package unit to the second package unit; a plurality of conductors penetrating the first encapsulant, the supporting member and the second encapsulant so as to connect the first side of the first encapsulant to the third side of the second encapsulant; and redistribution layer structures disposed on the first side of the first encapsulant and the third side of the second encapsulant, such that the redistribution layer structures are electrically connected to the conductors and first and second semiconductor elements.
地址 Taichung TW