发明名称 Body-contacted partially depleted silicon on insulator transistor
摘要 Embodiments include an apparatus, system, and method related to a body-contacted partially depleted silicon on insulator (PDSOI) transistor that may be used in a switch circuit. In some embodiments, the switch circuit may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.
申请公布号 US8829967(B2) 申请公布日期 2014.09.09
申请号 US201213535203 申请日期 2012.06.27
申请人 TriQuint Semiconductor, Inc. 发明人 Nohra George
分类号 H01L27/12;H03K5/02 主分类号 H01L27/12
代理机构 Schwabe Williamson & Wyatt 代理人 Schwabe Williamson & Wyatt
主权项 1. A circuit comprising: a switch transistor having gate, source, drain, and body contacts; first and second resistors coupled in series with one another and further coupled with and between the source and drain contacts; and a discharge transistor having a first contact coupled with the body contact of the switch transistor, a second contact coupled with the gate contact of the switch transistor, and a gate contact coupled with the first and second resistors.
地址 Hillsboro OR US