发明名称 |
Body-contacted partially depleted silicon on insulator transistor |
摘要 |
Embodiments include an apparatus, system, and method related to a body-contacted partially depleted silicon on insulator (PDSOI) transistor that may be used in a switch circuit. In some embodiments, the switch circuit may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed. |
申请公布号 |
US8829967(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US201213535203 |
申请日期 |
2012.06.27 |
申请人 |
TriQuint Semiconductor, Inc. |
发明人 |
Nohra George |
分类号 |
H01L27/12;H03K5/02 |
主分类号 |
H01L27/12 |
代理机构 |
Schwabe Williamson & Wyatt |
代理人 |
Schwabe Williamson & Wyatt |
主权项 |
1. A circuit comprising:
a switch transistor having gate, source, drain, and body contacts; first and second resistors coupled in series with one another and further coupled with and between the source and drain contacts; and a discharge transistor having a first contact coupled with the body contact of the switch transistor, a second contact coupled with the gate contact of the switch transistor, and a gate contact coupled with the first and second resistors. |
地址 |
Hillsboro OR US |