Ultrahigh density vertical NAND memory device

摘要

A monolithic three dimensional NAND string includes a semiconductor channel having at least one end extending substantially perpendicular to a major surface of a substrate, a plurality of control gates extending substantially parallel to the major surface of the substrate, including a first control gate located in a first device level and a second control gate located in a second device level, a charge storage material located in the first device level and in the second device level, a blocking dielectric located between the charge storage material and the plurality of control gates, and a tunneling dielectric located between the charge storage material and the semiconductor channel. The tunneling dielectric has a straight sidewall, portions of the blocking dielectric have a clam shape, and each of the plurality of control gates is located at least partially in an opening in the clam-shaped portion of the blocking dielectric.

主权项

1. A monolithic three dimensional NAND string, comprising:
a semiconductor channel located over a substrate, at least one end of the semiconductor channel extending substantially perpendicular to a major surface of the substrate; a plurality of control gates extending substantially parallel to the major surface of the substrate, wherein the plurality of control gates comprise at least a first control gate located in a first device level and a second control gate located in a second device level located over the substrate and below the first device level; a charge storage material located in the first device level and in the second device level; a blocking dielectric located between the charge storage material and the plurality of control gates; and a tunneling dielectric located between the charge storage material and the semiconductor channel; wherein:
the tunneling dielectric has a straight sidewall;portions of the blocking dielectric have a clam shape; andeach of the plurality of control gates is located at least partially in an opening in the clam-shaped portion of the blocking dielectric.